A Technique to Measure Trap Characteristics in CCDs Using X-rays
نویسندگان
چکیده
An important type of radiation damage in CCDs used for X-ray spectroscopy is the degradation of charge transfer eeciency (CTE). Traps associated with radiation induced defects are the basic cause of the damage. Here, we describe a method to extract trap characteristics using small charge packets produced by individual X-ray photon interactions in rectangular imaging CCDs. The method applies the principles of trap occupancy to the framestore CCD connguration. We have measured trap characteristics in radiation damaged CCDs in a range of operating temperatures from 170 to 200 K, and have found that these data compare well to the expected phosphorus-vacancy (P-V) trap characteristics.
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